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NXP Semiconductors
PTVSxP1UP series
600 W Transient Voltage Suppressor
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P PPM
I PPM
Parameter
rated peak pulse power
rated peak pulse current
Conditions
Min
-
-
Max
600
see
Unit
W
and 10
I FSM
Non-repetitive peak
single half-sine
-
100
A
forward current
wave; t p = 8.3 ms
T j
T amb
T stg
junction temperature
ambient temperature
storage temperature
-
? 55
? 65
150
+150
+150
° C
° C
° C
[1]
In accordance with IEC 61643-321 (10/1000 μ s current waveform).
Table 6. ESD maximum ratings
T amb = 25 ° C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Max
Unit
Per diode
V ESD
electrostatic discharge voltage
IEC 61000-4-2
[1][2]
-
30
kV
(contact discharge)
[1]
[2]
Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.
Soldering point of cathode tab.
Table 7.
Standard
Per diode
ESD standards compliance
Conditions
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
6. Thermal characteristics
> 15 kV (air); > 8 kV (contact)
> 4 kV
Table 8.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
R th(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
200
120
K/W
K/W
-
-
60
K/W
R th(j-sp)
thermal resistance from
-
-
12
K/W
junction to solder point
[1]
[2]
[3]
[4]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm 2 .
Device mounted on a ceramic PCB, Al 2 O 3 , standard footprint.
Soldering point of cathode tab.
PTVSXP1UP_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 6 January 2011
? NXP B.V. 2011. All rights reserved.
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